By Peter Wobrauschek, Peter Kregsamer, Christina Streli, Hannes Aiginger (auth.), Charles S. Barrett, John V. Gilfrich, I. C. Noyan, Ting C. Huang, Paul K. Predecki (eds.)
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Additional resources for Advances in X-Ray Analysis: Volume 34
X-Ray Anal. Dobbyn, Anal. Chern. Kregsamer, Spectrochim. Wobrauschek, Spectrochim. Brauner, Nucl. Instr. Meth. Aiginger, Adv. X-Ray Anal. Taniguchi Adv. , 32, 205 (1989) 12 33. 34. 35. 36. 37. 38. 39. 40. 41. 42. I. Saisho, Trends Anal. Chern. Gohshi, Adv. X-Ray Anal. Schuster, Adv. , to be published in same Vol. D. de Boer, Spectrochim. Acta, to be published D. de Boer, Adv. N. Greaves SERC Daresbury Laboratory, Warrington WA4 4AD, UK and Depanment of Chemistry, University of Keele, Keele Staffs.
At the first minimum in the reflectivity (fig. 9a, full line), there is a standing wave of exactly one period in the layer, with the antinode halfway the layer. So on the average, the X"ray intensity in the layer is large, resulting in a maximum in the XRF signal from the elements in that layer.
Figure 3 illustrates a continuous random network model built-up from the crystalline (100) surface using briding O's, octahedral and tetrahedral Ga's and tetrahedral As's . The disordered structure has a low density characterised by microscopic voids and channels. These can be envisaged as possible diffusion pathways for metals deposited onto the semiconductor surface. Complementary studies of Cu K-edge EXAFS of thin metal films evaporated onto GaAs(100) indicate complete oxidation, adding support to the conjecture that the porous surface oxide on GaAs(lOO) catalyses the oxidation of the deposited metal.